Irradiation effects of Ar-cluster ion beams on Si surfaces

G. H. Takaoka, G. Sugahara, R. E. Hummel, J. A. Northby, M. Sosnowski, I. Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations


The effects of energetic Ar cluster ion impacts on Si(111) surfaces have been studied for cluster energies up to 15keV. The mean cluster size was about 1000 atoms, and the smaller sizes could be systematically excluded. Si samples irradiated at different cluster ion energies were analyzed by RBS, ellipsometry, and differential reflectometry. Implantation of Ar in samples irradiated with cluster ions was found by RBS to be detectable, but very small in comparison with samples irradiated with monomer ions of the same energy. The thickness of the damage layer as measured by both ellipsometry and differential reflectometry was also much smaller in the cluster ion irradiated samples.

Original languageEnglish (US)
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558992154
StatePublished - 1994
Externally publishedYes
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Irradiation effects of Ar-cluster ion beams on Si surfaces'. Together they form a unique fingerprint.

Cite this