Is NMOSFET hot carrier lifetime degraded by charging damage?

K. P. Cheung, D. Misra, K. G. Steiner, J. I. Colonell, C. P. Chang, W. Y.C. Lai, C. T. Liu, R. Liu, C. S. Pai

Research output: Contribution to conferencePaperpeer-review

17 Scopus citations

Abstract

Experimental data are provided to resolve some discrepancies regarding n-channel hot carrier lifetime degradation by charging damage. Based on these data, differences in experimental data can be attributed to differences in the direction of current flow during charging damage. Data are also provided to support the notion that after high field stress, the distribution of electron traps is not uniform. It peaks near the cathode and looks like a sheet of negative charge. The data show that not all interface states are the same. The damage induced interface states are different from normal interface states and more readily reappear under stress.

Original languageEnglish (US)
Pages186-188
Number of pages3
StatePublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA
Duration: May 13 1997May 14 1997

Other

OtherProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
CityMonterey, CA, USA
Period5/13/975/14/97

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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