Is NMOSFET hot carrier lifetime degraded by charging damage?

K. P. Cheung; D. Misra; K. G. Steiner; J. I. Colonell; C. P. Chang; W. Y.C. Lai; C. T. Liu; R. Liu; C. S. Pai

Is NMOSFET hot carrier lifetime degraded by charging damage?

K. P. Cheung, D. Misra, K. G. Steiner, J. I. Colonell, C. P. Chang, W. Y.C. Lai, C. T. Liu, R. Liu, C. S. Pai

Research output: Contribution to conference › Paper › peer-review

Abstract

Experimental data are provided to resolve some discrepancies regarding n-channel hot carrier lifetime degradation by charging damage. Based on these data, differences in experimental data can be attributed to differences in the direction of current flow during charging damage. Data are also provided to support the notion that after high field stress, the distribution of electron traps is not uniform. It peaks near the cathode and looks like a sheet of negative charge. The data show that not all interface states are the same. The damage induced interface states are different from normal interface states and more readily reappear under stress.

Original language	English (US)
Pages	186-188
Number of pages	3
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA Duration: May 13 1997 → May 14 1997

Other

Other	Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
City	Monterey, CA, USA
Period	5/13/97 → 5/14/97

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@conference{3c6392436c374139b81866dd30d2a712,

title = "Is NMOSFET hot carrier lifetime degraded by charging damage?",

abstract = "Experimental data are provided to resolve some discrepancies regarding n-channel hot carrier lifetime degradation by charging damage. Based on these data, differences in experimental data can be attributed to differences in the direction of current flow during charging damage. Data are also provided to support the notion that after high field stress, the distribution of electron traps is not uniform. It peaks near the cathode and looks like a sheet of negative charge. The data show that not all interface states are the same. The damage induced interface states are different from normal interface states and more readily reappear under stress.",

author = "Cheung, {K. P.} and D. Misra and Steiner, {K. G.} and Colonell, {J. I.} and Chang, {C. P.} and Lai, {W. Y.C.} and Liu, {C. T.} and R. Liu and Pai, {C. S.}",

year = "1997",

language = "English (US)",

pages = "186--188",

note = "Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage ; Conference date: 13-05-1997 Through 14-05-1997",