Abstract
The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20 μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 95-102 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 525 |
| DOIs | |
| State | Published - 1998 |
| Event | Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering