TY - JOUR
T1 - Kinetic Monte Carlo Simulation of Interface-Controlled Hafnia-Based Resistive Memory
AU - Xu, Xu
AU - Rajendran, Bipin
AU - Anantram, M. P.
N1 - Funding Information:
Manuscript received September 27, 2019; revised November 8, 2019; accepted November 13, 2019. Date of publication December 16, 2019; date of current version December 30, 2019. The work of X. Xu and M. P. Anantram was supported by Winbond Inc. The review of this article was arranged by Editor S. Hong. (Corresponding author: M. P. Anantram.) X. Xu and M. P. Anantram are with the ECE Department, University of Washington, Seattle, WA 98195-2500 USA (e-mail: axuuw@uw.edu; anant@uw.edu).
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2020/1
Y1 - 2020/1
N2 - Kinetic Monte Carlo simulations of resistive memory devices have been performed by paying attention to the vacancy-interstitial generation near the Hafnia-metal electrode interface. In our model, an oxygen vacancy is generated in Hafnia near the interface, with the corresponding oxygen atom residing in the metal electrode. These oxygen atoms form a thin insulating oxide layer at the Hafnia-active electrode interface. This interfacial layer is essential to thicken the filament, even after the filament bridges the two metal electrodes at low current levels. This thickening of the conducting filament is captured by the model and it naturally explains the trend of resistance decrease with an increase in compliance current found in some experiments. Simulations results as a function of the bonding energy between vacancies show a large increase in retention time with an increase in bonding energy. We also find that as the compliance current increases, the morphology of the filament transitions from conical to dumbbell-shaped. Finally, using a single set of values for various energies, our simulations capture the SET, RESET, and retention processes.
AB - Kinetic Monte Carlo simulations of resistive memory devices have been performed by paying attention to the vacancy-interstitial generation near the Hafnia-metal electrode interface. In our model, an oxygen vacancy is generated in Hafnia near the interface, with the corresponding oxygen atom residing in the metal electrode. These oxygen atoms form a thin insulating oxide layer at the Hafnia-active electrode interface. This interfacial layer is essential to thicken the filament, even after the filament bridges the two metal electrodes at low current levels. This thickening of the conducting filament is captured by the model and it naturally explains the trend of resistance decrease with an increase in compliance current found in some experiments. Simulations results as a function of the bonding energy between vacancies show a large increase in retention time with an increase in bonding energy. We also find that as the compliance current increases, the morphology of the filament transitions from conical to dumbbell-shaped. Finally, using a single set of values for various energies, our simulations capture the SET, RESET, and retention processes.
KW - Kinetic Monte Carlo (KMC)
KW - resistive random access memory (RRAM)
KW - resistive switching
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U2 - 10.1109/TED.2019.2953917
DO - 10.1109/TED.2019.2953917
M3 - Article
AN - SCOPUS:85077811993
SN - 0018-9383
VL - 67
SP - 118
EP - 124
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
M1 - 8933359
ER -