TY - JOUR
T1 - Lamellar crystallization of silicon for 3-dimensional integration
AU - Witte, D. J.
AU - Crnogorac, F.
AU - Pickard, D. S.
AU - Mehta, A.
AU - Liu, Z.
AU - Rajendran, B.
AU - Pianetta, P.
AU - Pease, R. F.W.
N1 - Funding Information:
The authors wish to thank Dr. Ann Marshall at the Stanford Nanocharacterization Laboratory for her invaluable contributions to TEM analysis and Dr. Dave Biegelsen at the Palo Alto Research Center for his insights and ideas that have been instrumental to this work. This work was supported by the Defense Advanced Research Projects Agency (DARPA).
PY - 2007/5
Y1 - 2007/5
N2 - In order to realize monolithic 3-dimensional integration of semiconductor devices, we must be able to obtain device-quality single-crystalline regions of semiconductor on an amorphous substrate. This must be done without exceeding the thermal budget of underlying device layers. We present simulation results that show a 532 nm laser pulse of 15 μs duration can melt and crystallize an amorphous silicon region on top of an insulating layer, without heating underlayers above 450 °C. This timescale may allow the partial melting of silicon, in which solid lamellae of submicron width and exhibiting preferential 〈1 0 0〉 orientation can form. We show that a single lamella, once formed, can solidify on the 10 μs timescale to form a single crystal 2 μm wide. With control over the location of these lamellae, they may be of use in forming single-seeded crystalline regions in which devices can be fabricated.
AB - In order to realize monolithic 3-dimensional integration of semiconductor devices, we must be able to obtain device-quality single-crystalline regions of semiconductor on an amorphous substrate. This must be done without exceeding the thermal budget of underlying device layers. We present simulation results that show a 532 nm laser pulse of 15 μs duration can melt and crystallize an amorphous silicon region on top of an insulating layer, without heating underlayers above 450 °C. This timescale may allow the partial melting of silicon, in which solid lamellae of submicron width and exhibiting preferential 〈1 0 0〉 orientation can form. We show that a single lamella, once formed, can solidify on the 10 μs timescale to form a single crystal 2 μm wide. With control over the location of these lamellae, they may be of use in forming single-seeded crystalline regions in which devices can be fabricated.
KW - 3-dimensional integration
KW - Laser crystallization
KW - Rapid thermal processing
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=34247619381&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34247619381&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2007.01.249
DO - 10.1016/j.mee.2007.01.249
M3 - Article
AN - SCOPUS:34247619381
SN - 0167-9317
VL - 84
SP - 1186
EP - 1189
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 5-8
ER -