Lamellar crystallization of silicon for 3-dimensional integration

D. J. Witte, F. Crnogorac, D. S. Pickard, A. Mehta, Z. Liu, B. Rajendran, P. Pianetta, R. F.W. Pease

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In order to realize monolithic 3-dimensional integration of semiconductor devices, we must be able to obtain device-quality single-crystalline regions of semiconductor on an amorphous substrate. This must be done without exceeding the thermal budget of underlying device layers. We present simulation results that show a 532 nm laser pulse of 15 μs duration can melt and crystallize an amorphous silicon region on top of an insulating layer, without heating underlayers above 450 °C. This timescale may allow the partial melting of silicon, in which solid lamellae of submicron width and exhibiting preferential 〈1 0 0〉 orientation can form. We show that a single lamella, once formed, can solidify on the 10 μs timescale to form a single crystal 2 μm wide. With control over the location of these lamellae, they may be of use in forming single-seeded crystalline regions in which devices can be fabricated.

Original languageEnglish (US)
Pages (from-to)1186-1189
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
StatePublished - May 1 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • 3-dimensional integration
  • Laser crystallization
  • Rapid thermal processing
  • Silicon

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