TY - GEN
T1 - Large area GaN/AlN nanowire resonant tunneling devices on silicon
AU - Fathololoumi, S.
AU - Zhao, S.
AU - Nguyen, H. P.T.
AU - Djavid, M.
AU - Shih, I.
AU - Mi, Z.
PY - 2012
Y1 - 2012
N2 - We have demonstrated, for the first time, resonant tunneling in large area nanowire devices on Si substrates, wherein GaN/AlN multiple quantum wells are incorporated in nearly-defect free GaN nanowires on a Si-platform.
AB - We have demonstrated, for the first time, resonant tunneling in large area nanowire devices on Si substrates, wherein GaN/AlN multiple quantum wells are incorporated in nearly-defect free GaN nanowires on a Si-platform.
UR - http://www.scopus.com/inward/record.url?scp=84890712541&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890712541&partnerID=8YFLogxK
U2 - 10.1364/cleo_si.2012.cth3d.7
DO - 10.1364/cleo_si.2012.cth3d.7
M3 - Conference contribution
AN - SCOPUS:84890712541
SN - 9781557529435
T3 - CLEO: Science and Innovations, CLEO_SI 2012
SP - CTh3D.7
BT - CLEO
PB - Optical Society of America (OSA)
T2 - CLEO: Science and Innovations, CLEO_SI 2012
Y2 - 6 May 2012 through 11 May 2012
ER -