Large area GaN/AlN nanowire resonant tunneling devices on silicon

S. Fathololoumi, S. Zhao, H. P.T. Nguyen, M. Djavid, I. Shih, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated, for the first time, resonant tunneling in large area nanowire devices on Si substrates, wherein GaN/AlN multiple quantum wells are incorporated in nearly-defect free GaN nanowires on a Si-platform.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
PublisherOptical Society of America (OSA)
PagesCTh3D.7
ISBN (Print)9781557529435
DOIs
StatePublished - 2012
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2012

Other

OtherCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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