@inproceedings{9c0267934334436f8c7ba4b13c3dc59c,
title = "Large area GaN/AlN nanowire resonant tunneling devices on silicon",
abstract = "We have demonstrated, for the first time, resonant tunneling in large area nanowire devices on Si substrates, wherein GaN/AlN multiple quantum wells are incorporated in nearly-defect free GaN nanowires on a Si-platform.",
author = "S. Fathololoumi and S. Zhao and Nguyen, {H. P.T.} and M. Djavid and I. Shih and Z. Mi",
year = "2012",
language = "English (US)",
isbn = "9781467318396",
series = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",
booktitle = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",
note = "2012 Conference on Lasers and Electro-Optics, CLEO 2012 ; Conference date: 06-05-2012 Through 11-05-2012",
}