Large area InGaN/GaN nanowire solar cells on silicon

Hieu Pham Trung Nguyen; Yukun Li; Zetian Mi

Large area InGaN/GaN nanowire solar cells on silicon

Hieu Pham Trung Nguyen, Yukun Li, Zetian Mi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have demonstrated, for the first time, large area InGaN/GaN nanowire solar cells on Si. An efficiency of ∼0.19% is measured, which can be drastically improved by reducing the carrier localization and nonradiative surface recombination.

Original language	English (US)
Title of host publication	2012 Conference on Lasers and Electro-Optics, CLEO 2012
State	Published - 2012
Externally published	Yes
Event	2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012

Publication series

Name	2012 Conference on Lasers and Electro-Optics, CLEO 2012

Other

Other	2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/Territory	United States
City	San Jose, CA
Period	5/6/12 → 5/11/12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{d73b026ce07240368acdeecc733256e3,

title = "Large area InGaN/GaN nanowire solar cells on silicon",

abstract = "We have demonstrated, for the first time, large area InGaN/GaN nanowire solar cells on Si. An efficiency of ∼0.19% is measured, which can be drastically improved by reducing the carrier localization and nonradiative surface recombination.",

author = "Nguyen, {Hieu Pham Trung} and Yukun Li and Zetian Mi",

year = "2012",

language = "English (US)",

isbn = "9781467318396",

series = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",

booktitle = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",

note = "2012 Conference on Lasers and Electro-Optics, CLEO 2012 ; Conference date: 06-05-2012 Through 11-05-2012",

}

TY - GEN

T1 - Large area InGaN/GaN nanowire solar cells on silicon

AU - Nguyen, Hieu Pham Trung

AU - Li, Yukun

AU - Mi, Zetian

PY - 2012

Y1 - 2012

N2 - We have demonstrated, for the first time, large area InGaN/GaN nanowire solar cells on Si. An efficiency of ∼0.19% is measured, which can be drastically improved by reducing the carrier localization and nonradiative surface recombination.

AB - We have demonstrated, for the first time, large area InGaN/GaN nanowire solar cells on Si. An efficiency of ∼0.19% is measured, which can be drastically improved by reducing the carrier localization and nonradiative surface recombination.

UR - http://www.scopus.com/inward/record.url?scp=84870361284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870361284&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870361284

SN - 9781467318396

T3 - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

BT - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

T2 - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

Y2 - 6 May 2012 through 11 May 2012

ER -

Large area InGaN/GaN nanowire solar cells on silicon

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

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