Laser-induced etching of Si surfaces: the effect of weak background light

H. Grebel, T. Gayen

Research output: Contribution to journalConference articlepeer-review

Abstract

Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, CW, 5 mW HeNe laser was serving as background light which by itself was incapable to etch the Si surface. A substantial enhancement of the laser etching process with light background was observed. Etching process using many pulses was compared to etching by use of only one laser pulse.

Original languageEnglish (US)
Pages (from-to)105-108
Number of pages4
JournalMaterials Science Forum
Volume173-174
StatePublished - Jan 1 1995
EventProceedings of the 1st International Symposium on Semiconductor Processing and Characterization with Lasers - Stuttgart, Ger
Duration: Apr 18 1994Apr 20 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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