Abstract
Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, CW, 5 mW HeNe laser was serving as background light which by itself was incapable to etch the Si surface. A substantial enhancement of the laser etching process with light background was observed. Etching process using many pulses was compared to etching by use of only one laser pulse.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 105-108 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 173-174 |
| State | Published - 1995 |
| Event | Proceedings of the 1st International Symposium on Semiconductor Processing and Characterization with Lasers - Stuttgart, Ger Duration: Apr 18 1994 → Apr 20 1994 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering