Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Apr 15 1996|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)