Laser-induced etching of Si surfaces: The effect of weak background light

H. Grebel, T. Gayen, H. W. Wu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration.

Original languageEnglish (US)
Pages (from-to)4414-4417
Number of pages4
JournalJournal of Applied Physics
Issue number8
StatePublished - Apr 15 1996

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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