Laser-induced etching of Si surfaces: The effect of weak background light

H. Grebel; T. Gayen; H. W. Wu

doi:10.1063/1.361749

Laser-induced etching of Si surfaces: The effect of weak background light

H. Grebel, T. Gayen, H. W. Wu

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Abstract

Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration.

Original language	English (US)
Pages (from-to)	4414-4417
Number of pages	4
Journal	Journal of Applied Physics
Volume	79
Issue number	8
DOIs	https://doi.org/10.1063/1.361749
State	Published - Apr 15 1996

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.361749

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abstract = "Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration.",

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AU - Wu, H. W.

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N2 - Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration.

AB - Two different lasers were used to etch patterns on Si surfaces employing a thin film cell configuration. A strong, pulsed, 20 W KrF excimer laser was used for etching. A weak, cw, 5 mW HeNe laser provided background light. This laser, by itself, was incapable of etching the Si surface. A substantial enhancement of the laser etching process with background light was observed either when using many pulses or only one UV laser pulse. An even bigger change was observed as a function of the etchant concentration.

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Laser-induced etching of Si surfaces: The effect of weak background light

Abstract

All Science Journal Classification (ASJC) codes

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