We calculate and experimentally detect the laser melting threshold in nanocrystalline Si/amorphous Si O2 superlattices. Using laser energy density slightly above the melting threshold, we observe two types of laser-induced structural modifications: (i) disappearance of nanocrystalline Si phase in the samples with thin (∼2 nm) Si O2 layers and (ii) amorphization of Si nanocrystals in the samples with thicker (≥5 nm) Si O2 layers. The observed Si nanocrystal amorphization increases optical absorption and intensity of visible photoluminescence in nanocrystalline Si/amorphous Si O2 superlattices.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Apr 3 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)