Laser-induced structural modifications in nanocrystalline silicon/amorphous silicon dioxide superlattices

B. V. Kamenev, H. Grebel, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We calculate and experimentally detect the laser melting threshold in nanocrystalline Si/amorphous Si O2 superlattices. Using laser energy density slightly above the melting threshold, we observe two types of laser-induced structural modifications: (i) disappearance of nanocrystalline Si phase in the samples with thin (∼2 nm) Si O2 layers and (ii) amorphization of Si nanocrystals in the samples with thicker (≥5 nm) Si O2 layers. The observed Si nanocrystal amorphization increases optical absorption and intensity of visible photoluminescence in nanocrystalline Si/amorphous Si O2 superlattices.

Original languageEnglish (US)
Article number143117
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
StatePublished - Apr 3 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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