Abstract
We calculate and experimentally detect the laser melting threshold in nanocrystalline Si/amorphous Si O2 superlattices. Using laser energy density slightly above the melting threshold, we observe two types of laser-induced structural modifications: (i) disappearance of nanocrystalline Si phase in the samples with thin (∼2 nm) Si O2 layers and (ii) amorphization of Si nanocrystals in the samples with thicker (≥5 nm) Si O2 layers. The observed Si nanocrystal amorphization increases optical absorption and intensity of visible photoluminescence in nanocrystalline Si/amorphous Si O2 superlattices.
Original language | English (US) |
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Article number | 143117 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 14 |
DOIs | |
State | Published - Apr 3 2006 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)