Lateral superlattices fabricated with interferometric lithography for nanoscale device applications

Keyphrases

• Device Application 100%
• Nanoscale Devices 100%
• Lateral Superlattices 100%
• Interferometric Lithography 100%
• Inverted Pyramid 100%
• Electric Field (E-field) 50%
• Nanoscale Silicon 50%
• Microelectronics 25%
• Intensity Pattern 25%
• Two Dimensional 25%
• Laser Beams 25%
• Oxides 25%
• Crystal Plane 25%
• Nanometer Scale 25%
• Silicon Wafer 25%
• Silicon Nanocrystals 25%
• Silicon-based 25%
• Periodic Array 25%
• Amorphous Crystallization 25%
• (100) Silicon 25%
• Silicon Devices 25%
• Field Regions 25%
• Nanocrystals 25%
• Amorphous Silicon Thin Film 25%
• Standing Wave 25%
• Wave Intensity 25%
• Dry Etching 25%
• Processing Scheme 25%
• Silicon Crystal 25%
• (111) Silicon 25%
• Surface Patterning 25%
• KOH Etching 25%
• Controlled Crystallization 25%
• Mask Layer 25%
• Large-area Array 25%
• Photoresist Layer 25%

Engineering

• Nanoscale 100%
• Lithography 100%
• Electric Field 66%
• Nanometre 33%
• Two Dimensional 33%
• Anisotropic 33%
• Silicon Wafer 33%
• Silicon Nanocrystal 33%
• Photoresist 33%
• Structure Type 33%
• Silicon Device 33%
• Field Region 33%
• Laser Beam 33%
• Silicon Layer 33%
• Standing Wave 33%
• Dry Etching 33%
• Crystal Plane 33%
• Microelectronic Processing 33%

Material Science

• Silicon 100%
• Lithography 100%
• Superlattice 100%
• Nanocrystalline Material 66%
• Oxide Compound 33%
• Silicon Wafer 33%
• Amorphous Silicon 33%
• Dry Etching 33%
• Silicon Device 33%
• Surface Patterning 33%