Leakage mechanism of Ba0.8Sr0.2TiO 3/ZrO2 multilayer thin films

S. K. Sahoo, D. Misra, D. C. Agrawal, Y. N. Mohapatra, S. B. Majumder, R. S. Katiyar

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The temperature and field dependence of the I-V characteristics of Ba 0.8Sr0.2TiO3 thin films and Ba 0.8Sr0.2TiO3/ZrO2 multilayer thin films on Pt/Ti/SiO2/Si substrates are studied in the temperature range from 310 to 410 K. Leakage current behaviors of the film is analyzed in the light of various models. The bulk limited Poole-Frenkel mechanism is observed to dominate the leakage current in the temperature range of 310-410 K in the high field region. The energy of the trap levels calculated from the Poole-Frenkel model is in the range of 0.2-1.31 eV for different structures. In the low electric field region the conduction is Ohmic where as space charge limited current conduction is the dominant mechanism in the intermediate electric field region for all the temperatures.

Original languageEnglish (US)
Article number074112
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 2010

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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