LED for silicon-based integrated optoelectronics

L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

This paper shows that Si-rich silicon-oxide prepared by oxidation of PSi has appropriate light-emitting and carrier transport properties and is compatible with conventional processing techniques. The preparation procedure, device design and characterization are discussed in detail.

Original languageEnglish (US)
Pages150-151
Number of pages2
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'LED for silicon-based integrated optoelectronics'. Together they form a unique fingerprint.

Cite this