Abstract
This paper shows that Si-rich silicon-oxide prepared by oxidation of PSi has appropriate light-emitting and carrier transport properties and is compatible with conventional processing techniques. The preparation procedure, device design and characterization are discussed in detail.
| Original language | English (US) |
|---|---|
| Pages | 150-151 |
| Number of pages | 2 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996 |
Other
| Other | Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC |
|---|---|
| City | Santa Barbara, CA, USA |
| Period | 6/24/96 → 6/26/96 |
All Science Journal Classification (ASJC) codes
- General Engineering