LEDs based on oxidized porous polysilicon on a transparent substrate

C. C. Striemer; S. Chan; H. A. Lopez; K. D. Hirschman; H. Koyama; Q. Zhu; L. Tsybeskov; P. M. Fauchet; N. M. Kalkhoran; L. Depaulis

LEDs based on oxidized porous polysilicon on a transparent substrate

C. C. Striemer, S. Chan, H. A. Lopez, K. D. Hirschman, H. Koyama, Q. Zhu, L. Tsybeskov, P. M. Fauchet, N. M. Kalkhoran, L. Depaulis

Research output: Contribution to journal › Conference article › peer-review

Abstract

Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p⁺ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nm and showing degradation during 515 nm laser excitation with intensity <100 mW/cm². This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm².

Original language	English (US)
Pages (from-to)	511-515
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	536
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{0c4e251ba33e482e8efbb3950b803a7f,

title = "LEDs based on oxidized porous polysilicon on a transparent substrate",

abstract = "Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p+ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nm and showing degradation during 515 nm laser excitation with intensity <100 mW/cm2. This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm2.",

author = "Striemer, {C. C.} and S. Chan and Lopez, {H. A.} and Hirschman, {K. D.} and H. Koyama and Q. Zhu and L. Tsybeskov and Fauchet, {P. M.} and Kalkhoran, {N. M.} and L. Depaulis",

year = "1999",

language = "English (US)",

volume = "536",

pages = "511--515",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - LEDs based on oxidized porous polysilicon on a transparent substrate

AU - Striemer, C. C.

AU - Chan, S.

AU - Lopez, H. A.

AU - Hirschman, K. D.

AU - Koyama, H.

AU - Zhu, Q.

AU - Tsybeskov, L.

AU - Fauchet, P. M.

AU - Kalkhoran, N. M.

AU - Depaulis, L.

PY - 1999

Y1 - 1999

N2 - Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p+ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nm and showing degradation during 515 nm laser excitation with intensity <100 mW/cm2. This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm2.

AB - Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p+ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nm and showing degradation during 515 nm laser excitation with intensity <100 mW/cm2. This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0032591464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032591464&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032591464

SN - 0272-9172

VL - 536

SP - 511

EP - 515

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

LEDs based on oxidized porous polysilicon on a transparent substrate

Abstract

All Science Journal Classification (ASJC) codes

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