LEDs based on oxidized porous polysilicon on a transparent substrate

C. C. Striemer, S. Chan, H. A. Lopez, K. D. Hirschman, H. Koyama, Q. Zhu, L. Tsybeskov, P. M. Fauchet, N. M. Kalkhoran, L. Depaulis

Research output: Contribution to journalConference articlepeer-review


Light emitting devices (LEDs) based on porous polysilicon (PPS) have been fabricated on a transparent quartz substrate. Several structures have been developed, each consisting of a backside contact (ITO or p+ polysilicon), a light emitting PPS layer, a capping layer, and a metal top contact. Photoluminescence (PL) from PPS is similar to that of etched crystalline Si, peaking near 750 nm and showing degradation during 515 nm laser excitation with intensity <100 mW/cm2. This degradation disappears if PPS is oxidized after formation. Visible electroluminescence (EL) has been achieved in both oxidized and non-oxidized PPS devices with voltages under 10 V and current densities <200 mA/cm2.

Original languageEnglish (US)
Pages (from-to)511-515
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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