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Light emission from three-dimensional silicon-germanium nanostructures
D. J. Lockwood
, J. M. Baribeau
, E. K. Lee
, H. Y. Chang
,
L. Tsybeskov
Electrical and Computer Engineering
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Chapter in Book/Report/Conference proceeding
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Keyphrases
AuGe
50%
Bulk Si
50%
Carrier Recombination
100%
CMOS Technology
50%
Direct Band Gap
50%
Dynamic Types
50%
Energy Level Alignment
100%
Germanium Nanowire (GeNW)
100%
Heterointerface
50%
I-Energy
50%
III-V Semiconductors
50%
Light Emission
100%
Light Emitters
50%
Luminescence Quantum Efficiency
50%
Molecular Beam Epitaxy
50%
Nanostructures
50%
Optical Interconnects
50%
Photoexcitation
50%
Photoluminescence
100%
Photoluminescence Intensity
50%
Radiative Lifetime
100%
Si Layer
50%
SiGe
50%
SiGe Nanostructures
50%
Silicon-germanium
100%
Spectral Range
50%
Temperature Effect
50%
Temperature-independent
50%
Thermal Quenching
50%
Three-dimensional (3D)
100%
Engineering
Energy Band
100%
Energy Gap
50%
III-V Semiconductor
50%
Light Emission
100%
Nanometre
50%
Optical Interconnect
50%
Quantum Efficiency
50%
Spectral Range
50%
Thermal Excitation
50%
Material Science
Germanium
100%
III-V Semiconductor
33%
Luminescence
33%
Molecular Beam Epitaxy
33%
Nanocrystalline Material
100%
Photoluminescence
100%
Silicon
100%
Physics
Energy Band
66%
Light Emission
100%
Molecular Beam Epitaxy
33%
Optical Interconnect
33%
Photoexcitation
33%
Photoluminescence
100%