Light-emitting porous silicon after standard microelectronic processing

C. Peng, L. Tsybeskov, P. M. Fauchet, F. Seiferth, S. K. Kurinec, J. M. Rehm, G. L. McLendon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We have investigated the properties of light-emitting porous silicon (LEpSi) after standard microelectronic processing steps such as annealing, thermal and chemical oxidation, ion implantation, and reactive ion etching. The nature of the physical and chemical changes induced by these processing steps is studied. After thermal or chemical oxidation, the photoluminescence (PL) from LEpSi is blue shifted and more stable. Low dose dopant implantation essentially keeps the PL spectrum unchanged. Thermal annealing after ion implantation affects the PL intensity differently, depending on the type of ions. Reactive ion etching changes the surface morphology and shifts the PL peak to blue.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages179-184
Number of pages6
ISBN (Print)1558991948, 9781558991941
DOIs
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period4/12/934/14/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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