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Light-emitting porous silicon after standard microelectronic processing
C. Peng
,
L. Tsybeskov
, P. M. Fauchet
, F. Seiferth
, S. K. Kurinec
, J. M. Rehm
, G. L. McLendon
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
9
Scopus citations
Overview
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Keyphrases
Microelectronics
100%
Light-emitting
100%
Porous Silicon
100%
Ion Implantation
66%
Photoluminescence
66%
Reactive Ion Etching
66%
Thermal Oxidation
66%
Processing Stages
66%
Chemical Oxidation
66%
Blue Shift
33%
Dopant
33%
Annealing
33%
Surface Morphology
33%
Photoluminescence Intensity
33%
Thermal Annealing
33%
Photoluminescence Spectra
33%
Physical Changes
33%
Chemical Changes
33%
Light Property
33%
Material Science
Photoluminescence
100%
Porous Silicon
100%
Reactive Ion Etching
50%
Ion Implantation
50%
Oxidation Reaction
50%
Annealing
50%
Doping (Additives)
25%
Surface Morphology
25%