Abstract
The authors report the utilization of the photocarrier grating technique for a comparative study of the ambipolar diffusion length L in hydrogenated amorphous silicon. This novel method for accurately measuring L permits reliable determination of its light intensity dependence. Combining this method with standard steady-state photoconductivity measurements yields information on the effects of minute boron doping and intense light soaking on the distribution of states in the forbidden gap. Experimental results obtained with this method are presented and discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 352-356 |
| Number of pages | 5 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Volume | 1 |
| State | Published - 1988 |
| Externally published | Yes |
| Event | Twentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA Duration: Sep 26 1988 → Sep 30 1988 |
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering