Light intensity dependence of the ambipolar diffusion-length in hydrogenated amorphous silicon

I. Balberg, A. E. Delahoy, H. Weakliem

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The authors report the utilization of the photocarrier grating technique for a comparative study of the ambipolar diffusion length L in hydrogenated amorphous silicon. This novel method for accurately measuring L permits reliable determination of its light intensity dependence. Combining this method with standard steady-state photoconductivity measurements yields information on the effects of minute boron doping and intense light soaking on the distribution of states in the forbidden gap. Experimental results obtained with this method are presented and discussed.

Original languageEnglish (US)
Pages (from-to)352-356
Number of pages5
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Volume1
StatePublished - Dec 1 1988
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: Sep 26 1988Sep 30 1988

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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