Linear birefringence in GaAs/AIAs multiple quantum wells

A. A. Sirenko; P. Etchegoin; A. Fainstein; K. Eberl; M. Cardona

doi:10.1002/(SICI)1521-3951(199909)215:1<241::AID-PSSB241>3.0.CO;2-3

Linear birefringence in GaAs/AIAs multiple quantum wells

A. A. Sirenko, P. Etchegoin, A. Fainstein, K. Eberl, M. Cardona

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Transmission spectroscopy has been used to investigate the in-plane linear birefringence of GaAs/ AIAs multiple quantum wells (MQWs) with symmetric wells/barriers from 20/20 to 70/70 Ä. Varying optical thicknesses of the samples have been used to measure a reference value of the birefringence. While the resonant part in the dispersion of the birefringence has been attributed to the contribution from the confined electronic gaps, a nonresonant background birefringence has been analyzed as a function of the MQW period and explained by the presence of local fields.

Original language	English (US)
Pages (from-to)	241-246
Number of pages	6
Journal	Physica Status Solidi (B) Basic Research
Volume	215
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199909)215:1<241::AID-PSSB241>3.0.CO;2-3
State	Published - Sep 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-3951(199909)215:1<241::AID-PSSB241>3.0.CO;2-3

Cite this

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title = "Linear birefringence in GaAs/AIAs multiple quantum wells",

abstract = "Transmission spectroscopy has been used to investigate the in-plane linear birefringence of GaAs/ AIAs multiple quantum wells (MQWs) with symmetric wells/barriers from 20/20 to 70/70 {\"A}. Varying optical thicknesses of the samples have been used to measure a reference value of the birefringence. While the resonant part in the dispersion of the birefringence has been attributed to the contribution from the confined electronic gaps, a nonresonant background birefringence has been analyzed as a function of the MQW period and explained by the presence of local fields.",

author = "Sirenko, {A. A.} and P. Etchegoin and A. Fainstein and K. Eberl and M. Cardona",

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T1 - Linear birefringence in GaAs/AIAs multiple quantum wells

AU - Sirenko, A. A.

AU - Etchegoin, P.

AU - Fainstein, A.

AU - Eberl, K.

AU - Cardona, M.

PY - 1999/9

Y1 - 1999/9

N2 - Transmission spectroscopy has been used to investigate the in-plane linear birefringence of GaAs/ AIAs multiple quantum wells (MQWs) with symmetric wells/barriers from 20/20 to 70/70 Ä. Varying optical thicknesses of the samples have been used to measure a reference value of the birefringence. While the resonant part in the dispersion of the birefringence has been attributed to the contribution from the confined electronic gaps, a nonresonant background birefringence has been analyzed as a function of the MQW period and explained by the presence of local fields.

AB - Transmission spectroscopy has been used to investigate the in-plane linear birefringence of GaAs/ AIAs multiple quantum wells (MQWs) with symmetric wells/barriers from 20/20 to 70/70 Ä. Varying optical thicknesses of the samples have been used to measure a reference value of the birefringence. While the resonant part in the dispersion of the birefringence has been attributed to the contribution from the confined electronic gaps, a nonresonant background birefringence has been analyzed as a function of the MQW period and explained by the presence of local fields.

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DO - 10.1002/(SICI)1521-3951(199909)215:1<241::AID-PSSB241>3.0.CO;2-3

M3 - Article

AN - SCOPUS:0033242149

SN - 0370-1972

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 1

ER -

Linear birefringence in GaAs/AIAs multiple quantum wells

Abstract

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