Abstract
In this paper we discuss the classification of localized intrinsic/impurity defect states in the band gap of semiconductors according to the charging and transition energy levels of the state being single or multiple, and according to the atomic configuration and formation of energy of the state being single or multiple. For semiconductors that have multi-level intrinsic/impurity defect states (such as Cd vacancies VCd (o/-) and V Cd (-/2-) in CdTe thin film), the general formulation of charge neutrality condition is given to determine the Fermi level and majority carrier density. For semiconductors that have multi-configuration intrinsic/impurity defect states (such as acceptor CuCdand donor Cui in CdTe), the concept of transformation of state and self-compensation is introduced and discussed. The effect of state transformation and self-compensation on charge neutrality condition, Fermi level, and majority carrier density is explored. Numerical examples are given for CdTe to illustrate the relevance and importance of multi-level and multi-configuration intrinsic/impurity defect states for understanding the performance of CdTe thin film photovoltaics (PV).
Original language | English (US) |
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Title of host publication | Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
Pages | 878-884 |
Number of pages | 7 |
DOIs | |
State | Published - Dec 20 2010 |
Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010 |
Other
Other | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 6/20/10 → 6/25/10 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering