Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects

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Abstract

For semiconductors with localized intrinsic/impurity defects, intentionally doped or unintentionally incorporated, that have multiple transition energy levels among charge states, the general formulation of the local charge neutrality condition is given for the determination of the Fermi level and the majority carrier density. A graphical method is used to illustrate the solution of the problem. Relations among the transition energy levels of the multi-level defect are derived using the graphical method. Numerical examples are given for p-doping of the CdTe thin film used in solar panels and semi-insulating Si to illustrate the relevance and importance of the issues discussed in this work.

Original languageEnglish (US)
Article number112001
JournalJournal of Semiconductors
Volume32
Issue number11
DOIs
StatePublished - Nov 1 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Fermi level
  • defect complex
  • impurity
  • intrinsic
  • majority carrier density
  • multi-level defects
  • semiconductor

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