Low energy implantation of boron with decaborane ions

M. A. Albano, V. Babaram, J. M. Poate, Marek Sosnowski, D. C. Jacobson

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Formation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume610
StatePublished - Dec 1 2000
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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