Low-frequency (1f) noise performance of n- and p-MOSFETs with poly-SiHf-based gate dielectrics

Keyphrases

• MOSFET 100%
• Noise Performance 100%
• Gate Dielectric 100%
• 1f Noise 100%
• HfO2 60%
• Silicon Oxynitride (SiON) 60%
• Low-frequency Noise 40%
• Gate Oxide 40%
• Metal-organic Chemical Vapor Deposition (MOCVD) 40%
• Trap Density 40%
• Silicate 40%
• Order of Magnitude 20%
• Transistor 20%
• No Significant Difference 20%
• Noise Characteristics 20%
• N-channel 20%
• Polysilicon 20%
• Noise Spectrum 20%
• Gate Material 20%
• NMOSFET 20%
• P-channel 20%
• Hooge Parameter 20%
• Number Fluctuations 20%
• Noise Spectral Density 20%
• Frequency Exponent 20%
• Interfacial Oxide 20%
• Surface Traps 20%
• Fluctuation Mechanism 20%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Noise Performance 100%
• Gate Dielectric 100%
• Chemical Vapor Deposition 40%
• Vapor Deposition 40%
• Frequency Noise 40%
• Gate Oxide 40%
• Defects 20%
• Polysilicon 20%
• Figure of Merit 20%
• Noise Spectra 20%
• Oxide Layer 20%
• Spectral Noise 20%

Material Science

• Dielectric Material 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Density 60%
• Oxide Compound 60%
• Chemical Vapor Deposition 40%
• Silicate 40%
• Transistor 20%