Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices

Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R off/R on ratio of ∼103. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R off/R on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.

Original languageEnglish (US)
Article number075201
Issue number7
StatePublished - Feb 12 2023

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


  • GaO
  • RRAM
  • multilevel resistive switching


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