Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices

Ravi Teja Velpula; Barsha Jain; Hieu Pham Trung Nguyen

doi:10.1088/1361-6528/aca418

Low-power multilevel resistive switching in β-Ga₂O₃ based RRAM devices

Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, multilevel switching at low-power in Ti/TiN/Ga₂O₃/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R _off/R _on ratio of ∼10³. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R _off/R _on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga₂O₃ RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.

Original language	English (US)
Article number	075201
Journal	Nanotechnology
Volume	34
Issue number	7
DOIs	https://doi.org/10.1088/1361-6528/aca418
State	Published - Feb 12 2023

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Keywords

GaO
RRAM
multilevel resistive switching

Access to Document

10.1088/1361-6528/aca418

Cite this

@article{3f6f1b8f4f674c59a093c824f4a867a4,

title = "Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices",

abstract = "In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R off/R on ratio of ∼103. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R off/R on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.",

keywords = "GaO, RRAM, multilevel resistive switching",

author = "Velpula, {Ravi Teja} and Barsha Jain and Nguyen, {Hieu Pham Trung}",

note = "Publisher Copyright: {\textcopyright} 2022 IOP Publishing Ltd.",

year = "2023",

month = feb,

day = "12",

doi = "10.1088/1361-6528/aca418",

language = "English (US)",

volume = "34",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "7",

}

TY - JOUR

T1 - Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices

AU - Velpula, Ravi Teja

AU - Jain, Barsha

AU - Nguyen, Hieu Pham Trung

PY - 2023/2/12

Y1 - 2023/2/12

N2 - In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R off/R on ratio of ∼103. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R off/R on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.

AB - In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximum R off/R on ratio of ∼103. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably high R off/R on ratio is experimentally demonstrated, for the first time, for lower compliance currents at 10 μA, 20 μA and 50 μA. The multi-bit resistive switching behavior of the Ga2O3 RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.

KW - GaO

KW - RRAM

KW - multilevel resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85143644905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85143644905&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aca418

DO - 10.1088/1361-6528/aca418

M3 - Article

C2 - 36399780

AN - SCOPUS:85143644905

SN - 0957-4484

VL - 34

JO - Nanotechnology

JF - Nanotechnology

IS - 7

M1 - 075201

ER -