Low Pressure Chemical Vapor Deposition of Silicon Carbide from Ditertiarybutylsilane

J. M. Grow, R. A. Levy, M. Bhaskaran, H. J. Boeglin, R. Shalvoy

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24 Scopus citations


This study investigates the use of ditertiarybutylsilane as a single precursor to synthesize amorphous SiC films by low pressure chemical vapor deposition at temperatures below 850°C. The deposition rate is observed to vary linearly with the square root of flow rate and pressure. In the temperature range of 600 to 675°C, the deposition rate follows an Arrhenius behavior with an activation energy of 24 kcal mol*1, while above 675°C, it seems to be controlled by the homolytic cleavage of the Si-C bonds and mass–transfer limitations. The carbon content is seen to progressively increase with higher temperatures with a particularly rapid rate noted above 750°C. The hardness and the Young's modulus increase as the deposition temperature is raised reaching maximum values close to 20 and 200 GPa, respectively, at 750°C. The addition of NH3 is noted to improve significantly the optical transmission of the deposits while adversely impacting the film stress. In the temperature range between 810 and 850°C, free-standing membranes were produced using the chamber pressure to optimize stress.

Original languageEnglish (US)
Pages (from-to)3001-3007
Number of pages7
JournalJournal of the Electrochemical Society
Issue number10
StatePublished - Oct 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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