Keyphrases
Low Pressure Chemical Vapor Deposition (LPCVD)
100%
Silicon Carbide
100%
Deposition Temperature
100%
High Temperature
50%
Growth Rate
50%
Crystallinity
50%
Deposition Conditions
50%
Stoichiometry
50%
Young's Modulus
50%
Activation Energy
50%
Deposition Rate
50%
Amorphous Films
50%
Elemental Composition
50%
Arrhenius Behavior
50%
Stoichiometric Composition
50%
Amorphous SiC Films
50%
Single Precursor
50%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Deposition Temperature
100%
Crystallinity
50%
Flow Rate
50%
Deposition Condition
50%
Young's Modulus
50%
Activation Energy
50%
Mols
50%
Tensiles
50%
Arrhenius
50%
Deposition Rate
50%
Elemental Composition
50%
Flow Pressure
50%
Material Science
Film
100%
Low Pressure Chemical Vapor Deposition
100%
Silicon Carbide
100%
Amorphous Material
100%
Young's Modulus
50%
Activation Energy
50%
Amorphous Film
50%
Chemical Engineering
Silicon Carbide
100%
Low Pressure Chemical Vapor Deposition
100%
Deposition Rate
50%