LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN AND ALUMINUM VLSI APPLICATIONS.

R. A. Levy, M. L. Green

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper reviews the current status of LPCVD tungsten and aluminum for VLSI applications. Using deposition chemistries based on tungsten hexafluoride and tri-isobutyl aluminum, W and Al deposits are characterized with respect to their electrical, mechanical, structural, chemical and optical properties. Although results of this study prove these two LPCVD processes to be compatible with current VLSI fabrication, certain problems must still be resolved for complete commercial acceptance. These problems include, in the case of selective LPCVD tungsten, the occurrence of leakage current across N** plus /P-Tub junctions, and in the case of LPCVD aluminum, the relatively poor electromigration resistance (compared to Al-Cu) and excess surface roughness.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages229-247
Number of pages19
ISBN (Print)0931837375
StatePublished - Dec 1 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume71
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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