LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN AND ALUMINUM VLSI APPLICATIONS.

Physics & Astronomy

• acceptability 21%
• aluminum 42%
• chemical properties 21%
• chemistry 17%
• deposits 18%
• electromigration 24%
• fabrication 12%
• leakage 16%
• low pressure 51%
• mechanical properties 13%
• occurrences 16%
• optical properties 13%
• surface roughness 17%
• tungsten 52%
• vapor deposition 47%
• very large scale integration 73%

Engineering & Materials Science

• Aluminum 47%
• Bauxite deposits 39%
• Chemical properties 22%
• Electric properties 21%
• Electromigration 26%
• Fabrication 15%
• Leakage currents 21%
• Low pressure chemical vapor deposition 100%
• Mechanical properties 13%
• Optical properties 25%
• Structural properties 22%
• Surface roughness 16%
• Tungsten 66%

Chemical Compounds

• Application 19%
• Chemistry 11%
• Leakage Current 26%
• Low Pressure Chemical Vapour Deposition 89%
• Optical Property 14%
• Surface Roughness 20%
• Tungsten 56%