LOW PRESSURE SELECTIVE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN.

M. L. Green, R. A. Levy

Research output: Contribution to journalConference articlepeer-review

Abstract

CVD of tungsten (W) has many potential applications to VLSI technology, including that of a barrier layer between Al and Si, and an interconnect metallization. W can be deposited selectively via the hydrogen reduction of WF//6 at low temperatures. The implications of W CVD film processing on device performance will be discussed.

Original languageEnglish (US)
Pages (from-to)599-600
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume84-2
StatePublished - Dec 1 1984
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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