Abstract
CVD of tungsten (W) has many potential applications to VLSI technology, including that of a barrier layer between Al and Si, and an interconnect metallization. W can be deposited selectively via the hydrogen reduction of WF//6 at low temperatures. The implications of W CVD film processing on device performance will be discussed.
Original language | English (US) |
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Pages (from-to) | 599-600 |
Number of pages | 2 |
Journal | Electrochemical Society Extended Abstracts |
Volume | 84-2 |
State | Published - 1984 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering