CVD of tungsten (W) has many potential applications to VLSI technology, including that of a barrier layer between Al and Si, and an interconnect metallization. W can be deposited selectively via the hydrogen reduction of WF//6 at low temperatures. The implications of W CVD film processing on device performance will be discussed.
|Original language||English (US)|
|Number of pages||2|
|Journal||Electrochemical Society Extended Abstracts|
|State||Published - Dec 1 1984|
All Science Journal Classification (ASJC) codes