Abstract
CVD of tungsten (W) has many potential applications to VLSI technology, including that of a barrier layer between Al and Si, and an interconnect metallization. W can be deposited selectively via the hydrogen reduction of WF//6 at low temperatures. The implications of W CVD film processing on device performance will be discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 599-600 |
| Number of pages | 2 |
| Journal | Electrochemical Society Extended Abstracts |
| Volume | 84-2 |
| State | Published - Dec 1 1984 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)