Low voltage drop AlGaN UV-A laser structures with transparent tunnel junctions and optimized quantum wells

Arnob Ghosh, Agnes Maneesha Dominic Merwin Xavier, Syed M.N. Hasan, Sheikh Ifatur Rahman, Alex Blackston, Andrew Allerman, Roberto C. Myers, Siddharth Rajan, Shamsul Arafin

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents the design, material growth and fabrication of AlGaN laser structures grown by plasma-assisted molecular beam epitaxy. Considering hole transport to be the major challenge, our ultraviolet-A diode laser structures have a compositionally graded transparent tunnel junction, resulting in superior hole injection and a low contact resistance. By optimizing active region thickness, a five-fold improvement in photoluminescence intensity is obtained compared to that of our own non-optimized test structures. The electrical and optical characteristics of processed devices demonstrate only spontaneous emission with a peak wavelength at 354 nm. The devices operate up to a continuous-wave current density of 11.1 kA cm−2 at room temperature, which is the highest reported for laser structures grown on AlGaN templates. Additionally, they exhibit a record-low voltage drop of 8.5 V to achieve this current density.

Original languageEnglish (US)
Article number035105
JournalJournal of Physics D: Applied Physics
Volume57
Issue number3
DOIs
StatePublished - Jan 19 2024
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Keywords

  • AlGaN
  • PAMBE
  • UV-A laser
  • quantum wells
  • tunnel junction

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