LPCVD of silicon carbide films from the organosilanes diethylsilane and di-t-butylsilane

Roland A. Levy, James M. Grow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, the kinetics and properties of amorphous LPCVD silicon carbide films synthesized from the single organosilane precursors diethylsilane (DES) or di-t-butylsilane (DTBS) are discussed, For DES, the growth rate is observed to vary linearly with flow rate and pressure, pressure, while for DTBS, a square root dependency is seen as a function of these parameters. An Arrhenius type behavior was observed for both chemistries yielding activation energy values of 40 and 25 kcal/mol for DES and DTBS respectively. The elemental composition of the films became progressively richer in carbon as the deposition temperature increased with stoichiometry occurring near 750°C. The film stress was dependent on carbon content and became compressive at compositions near Si0.35c0. 65. The hardness and Young's modulus of the films increased with increasing carbon content reaching maxima near stoichiometry. Free-standing membranes produced under optimal processing conditions had a relatively low optical transmission due to excess carbon. Although, transmission characteristics were improved by adding NH3 in the reaction chamber, the resulting silicon carbonitride films exhibited undesirable high values of tensile stress.

Original languageEnglish (US)
Title of host publicationMaterials Aspects of X-Ray Lithography
PublisherPubl by Materials Research Society
Pages219-228
Number of pages10
ISBN (Print)1558992022, 9781558992023
DOIs
StatePublished - Jan 1 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume306
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/12/934/14/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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