LPCVD of silicon carbide films from the organosilanes diethylsilane and di-t-butylsilane

Keyphrases

• Low Pressure Chemical Vapor Deposition (LPCVD) 100%
• Silicon Carbide Film 100%
• Stoichiometry 100%
• Carbon Content 100%
• Organosilane 100%
• Growth Rate 50%
• Young's Modulus 50%
• Activation Energy 50%
• Square Root 50%
• Optical Transmission 50%
• Tensile Stress 50%
• Transmission Characteristics 50%
• Arrhenius-type 50%
• Deposition Temperature 50%
• Elemental Composition 50%
• Reaction Chamber 50%
• Silicon Carbonitride Films 50%
• Energy Value 50%
• Film Stress 50%
• Organosilane Precursors 50%
• Optimal Processing Conditions 50%
• Excess Carbon 50%
• Freestanding Membranes 50%

Engineering

• Organosilane 100%
• Reaction Stoichiometry 100%
• Low Pressure Chemical Vapor Deposition 100%
• Carbon Content 100%
• Flow Rate 50%
• Young's Modulus 50%
• Activation Energy 50%
• Mols 50%
• Square Root 50%
• Arrhenius 50%
• Optical Transmission 50%
• Tensile Stress σ 50%
• Deposition Temperature 50%
• Elemental Composition 50%
• Flow Pressure 50%
• Reaction Chamber 50%
• Carbonitrides 50%
• Flow Velocity 50%
• Calorific Value 50%
• Processing Condition 50%

Material Science

• Film 100%
• Low Pressure Chemical Vapor Deposition 100%
• Silicon Carbide 100%
• Silicon 16%
• Young's Modulus 16%
• Activation Energy 16%
• Ultimate Tensile Strength 16%
• Carbon Nitride 16%
• Processing Condition 16%