Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Mohammad Mahafuzur Rahaman; Shantanu Saha; Syed M.N. Hasan; Weicheng You; Arnob Ghosh; Md Saiful Islam Sumon; S. K. Shafaat Saud Nikor; Benjamin Freeman; Shrivatch Sankar; Hendrik Colijn; Sharif Md. Sadaf; Jivtesh Garg; Shamsul Arafin

doi:10.1016/j.jcrysgro.2022.126781

Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Mohammad Mahafuzur Rahaman, Shantanu Saha, Syed M.N. Hasan, Weicheng You, Arnob Ghosh, Md Saiful Islam Sumon, S. K. Shafaat Saud Nikor, Benjamin Freeman, Shrivatch Sankar, Hendrik Colijn, Sharif Md. Sadaf, Jivtesh Garg, Shamsul Arafin

Research output: Contribution to journal › Article › peer-review

Abstract

The emission of sub-bandgap photons from a ultrawide bandgap cubic-boron nitride material is a phenomenon that can be applied to next-generation quantum photonic devices. This paper reports the structural and morphological characteristics of this new research material synthesized by the drop-casting technique in ambient conditions. Our x-ray diffraction (XRD) analysis shows a primary peak at ∼44° related to the (111) plane which confirms the cubic phase of boron nitride. The optical and vibrational properties of the material were investigated by cathodoluminescence and Raman spectroscopic measurements, respectively. The optical study provides experimental evidence of four different radiative sub-bandgap levels in the visible spectral region. These preliminary findings show a potential route to implement high-performance quantum emitters using this highly-sought material with extreme properties.

Original language	English (US)
Article number	126781
Journal	Journal of Crystal Growth
Volume	593
DOIs	https://doi.org/10.1016/j.jcrysgro.2022.126781
State	Published - Sep 1 2022
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Characterization
A1. Defects
A1. Point defects
A3. High resolution X-ray diffraction
B1. Nanomaterials
B2. Semiconducting III-V materials

Access to Document

10.1016/j.jcrysgro.2022.126781

Cite this

Mahafuzur Rahaman, M., Saha, S., Hasan, S. M. N., You, W., Ghosh, A., Saiful Islam Sumon, M., Shafaat Saud Nikor, S. K., Freeman, B., Sankar, S., Colijn, H., Md. Sadaf, S., Garg, J., & Arafin, S. (2022). Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique. Journal of Crystal Growth, 593, Article 126781. https://doi.org/10.1016/j.jcrysgro.2022.126781

@article{1e67fdcb80234faca55032a76c4f4d88,

title = "Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique",

abstract = "The emission of sub-bandgap photons from a ultrawide bandgap cubic-boron nitride material is a phenomenon that can be applied to next-generation quantum photonic devices. This paper reports the structural and morphological characteristics of this new research material synthesized by the drop-casting technique in ambient conditions. Our x-ray diffraction (XRD) analysis shows a primary peak at ∼44° related to the (111) plane which confirms the cubic phase of boron nitride. The optical and vibrational properties of the material were investigated by cathodoluminescence and Raman spectroscopic measurements, respectively. The optical study provides experimental evidence of four different radiative sub-bandgap levels in the visible spectral region. These preliminary findings show a potential route to implement high-performance quantum emitters using this highly-sought material with extreme properties.",

keywords = "A1. Characterization, A1. Defects, A1. Point defects, A3. High resolution X-ray diffraction, B1. Nanomaterials, B2. Semiconducting III-V materials",

author = "{Mahafuzur Rahaman}, Mohammad and Shantanu Saha and Hasan, {Syed M.N.} and Weicheng You and Arnob Ghosh and {Saiful Islam Sumon}, Md and {Shafaat Saud Nikor}, {S. K.} and Benjamin Freeman and Shrivatch Sankar and Hendrik Colijn and {Md. Sadaf}, Sharif and Jivtesh Garg and Shamsul Arafin",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = sep,

day = "1",

doi = "10.1016/j.jcrysgro.2022.126781",

language = "English (US)",

volume = "593",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

Mahafuzur Rahaman, M, Saha, S, Hasan, SMN, You, W, Ghosh, A, Saiful Islam Sumon, M, Shafaat Saud Nikor, SK, Freeman, B, Sankar, S, Colijn, H, Md. Sadaf, S, Garg, J & Arafin, S 2022, 'Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique', Journal of Crystal Growth, vol. 593, 126781. https://doi.org/10.1016/j.jcrysgro.2022.126781

TY - JOUR

T1 - Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

AU - Mahafuzur Rahaman, Mohammad

AU - Saha, Shantanu

AU - Hasan, Syed M.N.

AU - You, Weicheng

AU - Ghosh, Arnob

AU - Saiful Islam Sumon, Md

AU - Shafaat Saud Nikor, S. K.

AU - Freeman, Benjamin

AU - Sankar, Shrivatch

AU - Colijn, Hendrik

AU - Md. Sadaf, Sharif

AU - Garg, Jivtesh

AU - Arafin, Shamsul

PY - 2022/9/1

Y1 - 2022/9/1

N2 - The emission of sub-bandgap photons from a ultrawide bandgap cubic-boron nitride material is a phenomenon that can be applied to next-generation quantum photonic devices. This paper reports the structural and morphological characteristics of this new research material synthesized by the drop-casting technique in ambient conditions. Our x-ray diffraction (XRD) analysis shows a primary peak at ∼44° related to the (111) plane which confirms the cubic phase of boron nitride. The optical and vibrational properties of the material were investigated by cathodoluminescence and Raman spectroscopic measurements, respectively. The optical study provides experimental evidence of four different radiative sub-bandgap levels in the visible spectral region. These preliminary findings show a potential route to implement high-performance quantum emitters using this highly-sought material with extreme properties.

AB - The emission of sub-bandgap photons from a ultrawide bandgap cubic-boron nitride material is a phenomenon that can be applied to next-generation quantum photonic devices. This paper reports the structural and morphological characteristics of this new research material synthesized by the drop-casting technique in ambient conditions. Our x-ray diffraction (XRD) analysis shows a primary peak at ∼44° related to the (111) plane which confirms the cubic phase of boron nitride. The optical and vibrational properties of the material were investigated by cathodoluminescence and Raman spectroscopic measurements, respectively. The optical study provides experimental evidence of four different radiative sub-bandgap levels in the visible spectral region. These preliminary findings show a potential route to implement high-performance quantum emitters using this highly-sought material with extreme properties.

KW - A1. Characterization

KW - A1. Defects

KW - A1. Point defects

KW - A3. High resolution X-ray diffraction

KW - B1. Nanomaterials

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=85133284406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85133284406&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2022.126781

DO - 10.1016/j.jcrysgro.2022.126781

M3 - Article

AN - SCOPUS:85133284406

SN - 0022-0248

VL - 593

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 126781

ER -

Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this