Abstract
The emission of sub-bandgap photons from a ultrawide bandgap cubic-boron nitride material is a phenomenon that can be applied to next-generation quantum photonic devices. This paper reports the structural and morphological characteristics of this new research material synthesized by the drop-casting technique in ambient conditions. Our x-ray diffraction (XRD) analysis shows a primary peak at ∼44° related to the (111) plane which confirms the cubic phase of boron nitride. The optical and vibrational properties of the material were investigated by cathodoluminescence and Raman spectroscopic measurements, respectively. The optical study provides experimental evidence of four different radiative sub-bandgap levels in the visible spectral region. These preliminary findings show a potential route to implement high-performance quantum emitters using this highly-sought material with extreme properties.
Original language | English (US) |
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Article number | 126781 |
Journal | Journal of Crystal Growth |
Volume | 593 |
DOIs | |
State | Published - Sep 1 2022 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Keywords
- A1. Characterization
- A1. Defects
- A1. Point defects
- A3. High resolution X-ray diffraction
- B1. Nanomaterials
- B2. Semiconducting III-V materials