Luminescence and Raman spectroscopic properties of cubic boron nitride grown by drop-casting technique

Mohammad Mahafuzur Rahaman, Shantanu Saha, Syed M.N. Hasan, Weicheng You, Arnob Ghosh, Md Saiful Islam Sumon, S. K. Shafaat Saud Nikor, Benjamin Freeman, Shrivatch Sankar, Hendrik Colijn, Sharif Md. Sadaf, Jivtesh Garg, Shamsul Arafin

Research output: Contribution to journalArticlepeer-review


The emission of sub-bandgap photons from a ultrawide bandgap cubic-boron nitride material is a phenomenon that can be applied to next-generation quantum photonic devices. This paper reports the structural and morphological characteristics of this new research material synthesized by the drop-casting technique in ambient conditions. Our x-ray diffraction (XRD) analysis shows a primary peak at ∼44° related to the (111) plane which confirms the cubic phase of boron nitride. The optical and vibrational properties of the material were investigated by cathodoluminescence and Raman spectroscopic measurements, respectively. The optical study provides experimental evidence of four different radiative sub-bandgap levels in the visible spectral region. These preliminary findings show a potential route to implement high-performance quantum emitters using this highly-sought material with extreme properties.

Original languageEnglish (US)
Article number126781
JournalJournal of Crystal Growth
StatePublished - Sep 1 2022
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


  • A1. Characterization
  • A1. Defects
  • A1. Point defects
  • A3. High resolution X-ray diffraction
  • B1. Nanomaterials
  • B2. Semiconducting III-V materials


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