TY - GEN
T1 - Luminescence properties of porous silicon
AU - Peng, C.
AU - Tsybeskov, L.
AU - Fauchet, P. M.
PY - 1993
Y1 - 1993
N2 - We report the results of a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI). PSI layers with stable, high efficiency photoluminescence (PL) tunable from the near infrared to the yellow have been obtained using p-type and n-type substrates. As the temperature drops below 100 K, the as-anodized PSI layers display striking changes in the PL spectra, which are absent in PSI layers that have received a post-growth treatment.
AB - We report the results of a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI). PSI layers with stable, high efficiency photoluminescence (PL) tunable from the near infrared to the yellow have been obtained using p-type and n-type substrates. As the temperature drops below 100 K, the as-anodized PSI layers display striking changes in the PL spectra, which are absent in PSI layers that have received a post-growth treatment.
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M3 - Conference contribution
AN - SCOPUS:0027260085
SN - 1558991786
T3 - Materials Research Society Symposium Proceedings
SP - 121
EP - 126
BT - Materials Research Society Symposium Proceedings
PB - Publ by Materials Research Society
T2 - Proceedings of the Second Symposium on Dynamics in Small Confining Systems
Y2 - 30 November 1992 through 4 December 1992
ER -