Luminescence properties of porous silicon

C. Peng, L. Tsybeskov, P. M. Fauchet

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations

Abstract

We report the results of a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI). PSI layers with stable, high efficiency photoluminescence (PL) tunable from the near infrared to the yellow have been obtained using p-type and n-type substrates. As the temperature drops below 100 K, the as-anodized PSI layers display striking changes in the PL spectra, which are absent in PSI layers that have received a post-growth treatment.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages121-126
Number of pages6
ISBN (Print)1558991786
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume283
ISSN (Print)0272-9172

Other

OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period11/30/9212/4/92

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Luminescence properties of porous silicon'. Together they form a unique fingerprint.

Cite this