A disordered metal can be driven through a metal-insulator transition by the application of a sufficiently large magnetic field. A comparison of recent results in Ge:As to other materials suggests that an instability may occur toward a spin or charge density wave state. This state, while related to Wigner crystallization, may only have short range order. The transport properties exhibit a well defined crossover field and suggest the possibility of a phase transition at zero temperature.
|Original language||English (US)|
|Title of host publication||Disord Semicond|
|ISBN (Print)||0306424940, 9780306424946|
|State||Published - 1987|
All Science Journal Classification (ASJC) codes