Abstract
We find low-temperature positive magnetoresistance independent of sample orientation in bulk, metallic samples of Si:P. The results are consistent with the Coulomb interactions picture including spin-splitting and show no evidence for the effects of localization.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 507-508 |
| Number of pages | 2 |
| Journal | Physica B+C |
| Volume | 107 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Aug 1 1981 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering