Manufacture of submicron light-emitting porous silicon areas for miniature LEDs

S. P. Duttagupta, C. Peng, L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

We have investigated several methods to form submicron-size porous silicon regions. Porous silicon can emit light from the violet to past 1.5 μm with high photoluminescence efficiency at room temperature. It is composed of a high density of nanometer-scale crystalline silicon wires or dots. To integrate light-emitting porous silicon (LEPSi) LEDs with conventional Si microelectronics, it is necessary to produce miniature LEPSi regions adjacent to fully protected crystalline silicon regions. These techniques can be divided into two groups. In the first group formation of LEPSi is prevented during electrochemistry. Using optical and electron beam lithography, and a trilayer process with silicon nitride or amorphization by ion-implantation, we have made LEPSi patterns as small as 100 nm. In the second group, the formation of LEPSi during electrochemistry is enhanced by ion-milling or reactive ion-etching which we have found to help the pore nucleation. We have used a variety of mapping techniques, such as photoluminescence, atomic force and electron beam microscopies, to characterize the sharpness of the interface between the porous silicon and crystalline silicon regions.

Original languageEnglish (US)
Pages (from-to)73-78
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume380
DOIs
StatePublished - Jan 1 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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