Manufacturing-compatible methods for the formation of Cu(In,Ga)Se2 thin films

A. M. Gabor; J. S. Britt; A. E. Delahoy; R. Noufi; Z. J. Kiss

Manufacturing-compatible methods for the formation of Cu(In,Ga)Se₂ thin films

A. M. Gabor, J. S. Britt, A. E. Delahoy, R. Noufi, Z. J. Kiss

Research output: Contribution to journal › Conference article › peer-review

Abstract

At EPV we continue to develop suitable methods of Cu(In,Ga)Se₂ thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V_OC uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The FF of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.

Original language	English (US)
Pages (from-to)	889-892
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duration: May 13 1996 → May 17 1996

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "Manufacturing-compatible methods for the formation of Cu(In,Ga)Se2 thin films",

abstract = "At EPV we continue to develop suitable methods of Cu(In,Ga)Se2 thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and VOC uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The FF of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.",

author = "Gabor, {A. M.} and Britt, {J. S.} and Delahoy, {A. E.} and R. Noufi and Kiss, {Z. J.}",

year = "1996",

language = "English (US)",

pages = "889--892",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

TY - JOUR

T1 - Manufacturing-compatible methods for the formation of Cu(In,Ga)Se2 thin films

AU - Gabor, A. M.

AU - Britt, J. S.

AU - Delahoy, A. E.

AU - Noufi, R.

AU - Kiss, Z. J.

PY - 1996

Y1 - 1996

N2 - At EPV we continue to develop suitable methods of Cu(In,Ga)Se2 thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and VOC uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The FF of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.

AB - At EPV we continue to develop suitable methods of Cu(In,Ga)Se2 thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and VOC uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The FF of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.

UR - http://www.scopus.com/inward/record.url?scp=0030395649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030395649&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030395649

SN - 0160-8371

SP - 889

EP - 892

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Manufacturing-compatible methods for the formation of Cu(In,Ga)Se₂ thin films

Abstract

All Science Journal Classification (ASJC) codes

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