Manufacturing-compatible methods for the formation of Cu(In,Ga)Se2 thin films

A. M. Gabor, J. S. Britt, A. E. Delahoy, R. Noufi, Z. J. Kiss

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

At EPV we continue to develop suitable methods of Cu(In,Ga)Se2 thin-film formation for application in our large-scale manufacturing equipment. Total-area cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and VOC uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The FF of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.

Original languageEnglish (US)
Pages (from-to)889-892
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Dec 1 1996
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: May 13 1996May 17 1996

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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