Marks for SCALPEL tool optics optimization

R. C. Farrow; G. M. Gallatin; W. K. Waskiewicz; J. A. Liddle; I. Kizilyalli; A. Kornblit; C. Biddick; M. Blakey; F. Klemens; J. Felker; J. Kraus; M. Mkrtchyan; P. A. Orphanos; N. Layadi; S. Merchant

doi:10.1016/S0167-9317(00)00321-X

Marks for SCALPEL tool optics optimization

R. C. Farrow, G. M. Gallatin, W. K. Waskiewicz, J. A. Liddle, I. Kizilyalli, A. Kornblit, C. Biddick, M. Blakey, F. Klemens, J. Felker, J. Kraus, M. Mkrtchyan, P. A. Orphanos, N. Layadi, S. Merchant

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO₂/WSi₂ structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.

Original language	English (US)
Pages (from-to)	309-312
Number of pages	4
Journal	Microelectronic Engineering
Volume	53
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(00)00321-X
State	Published - Jun 2000
Externally published	Yes
Event	25th International Conference on Micro- and Nano-Engineering - Rome, Italy Duration: Sep 21 1999 → Sep 23 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(00)00321-X

Cite this

@article{8b164d3c633a42b09887b1536e6276d1,

title = "Marks for SCALPEL tool optics optimization",

abstract = "A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.",

author = "Farrow, {R. C.} and Gallatin, {G. M.} and Waskiewicz, {W. K.} and Liddle, {J. A.} and I. Kizilyalli and A. Kornblit and C. Biddick and M. Blakey and F. Klemens and J. Felker and J. Kraus and M. Mkrtchyan and Orphanos, {P. A.} and N. Layadi and S. Merchant",

note = "Funding Information: The SCALPEL aerial image monitor concept has been described previously? The approach utilizes the information contained in an alignment signal generated by scanning the image of a mask {\textregistered} SCALPEL is a registered trademark of Lucent Technologies. {"}This work was supported, in part, by DARPA under contract MDA972-98-C-007 and by International SEMATECH.; 25th International Conference on Micro- and Nano-Engineering ; Conference date: 21-09-1999 Through 23-09-1999",

year = "2000",

month = jun,

doi = "10.1016/S0167-9317(00)00321-X",

language = "English (US)",

volume = "53",

pages = "309--312",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Marks for SCALPEL tool optics optimization

AU - Farrow, R. C.

AU - Gallatin, G. M.

AU - Waskiewicz, W. K.

AU - Liddle, J. A.

AU - Kizilyalli, I.

AU - Kornblit, A.

AU - Biddick, C.

AU - Blakey, M.

AU - Klemens, F.

AU - Felker, J.

AU - Kraus, J.

AU - Mkrtchyan, M.

AU - Orphanos, P. A.

AU - Layadi, N.

AU - Merchant, S.

N1 - Funding Information: The SCALPEL aerial image monitor concept has been described previously? The approach utilizes the information contained in an alignment signal generated by scanning the image of a mask ® SCALPEL is a registered trademark of Lucent Technologies. "This work was supported, in part, by DARPA under contract MDA972-98-C-007 and by International SEMATECH.

PY - 2000/6

Y1 - 2000/6

N2 - A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.

AB - A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034206297&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(00)00321-X

DO - 10.1016/S0167-9317(00)00321-X

M3 - Conference article

AN - SCOPUS:0034206297

SN - 0167-9317

VL - 53

SP - 309

EP - 312

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - 25th International Conference on Micro- and Nano-Engineering

Y2 - 21 September 1999 through 23 September 1999

ER -

Marks for SCALPEL tool optics optimization

Abstract

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