TY - JOUR
T1 - Marks for SCALPEL tool optics optimization
AU - Farrow, R. C.
AU - Gallatin, G. M.
AU - Waskiewicz, W. K.
AU - Liddle, J. A.
AU - Kizilyalli, I.
AU - Kornblit, A.
AU - Biddick, C.
AU - Blakey, M.
AU - Klemens, F.
AU - Felker, J.
AU - Kraus, J.
AU - Mkrtchyan, M.
AU - Orphanos, P. A.
AU - Layadi, N.
AU - Merchant, S.
N1 - Funding Information:
The SCALPEL aerial image monitor concept has been described previously? The approach utilizes the information contained in an alignment signal generated by scanning the image of a mask ® SCALPEL is a registered trademark of Lucent Technologies. "This work was supported, in part, by DARPA under contract MDA972-98-C-007 and by International SEMATECH.
PY - 2000/6
Y1 - 2000/6
N2 - A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.
AB - A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.
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U2 - 10.1016/S0167-9317(00)00321-X
DO - 10.1016/S0167-9317(00)00321-X
M3 - Conference article
AN - SCOPUS:0034206297
SN - 0167-9317
VL - 53
SP - 309
EP - 312
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1
T2 - 25th International Conference on Micro- and Nano-Engineering
Y2 - 21 September 1999 through 23 September 1999
ER -