Marks for SCALPEL tool optics optimization

R. C. Farrow, G. M. Gallatin, W. K. Waskiewicz, J. A. Liddle, I. Kizilyalli, A. Kornblit, C. Biddick, M. Blakey, F. Klemens, J. Felker, J. Kraus, M. Mkrtchyan, P. A. Orphanos, N. Layadi, S. Merchant

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.

Original languageEnglish (US)
Pages (from-to)309-312
Number of pages4
JournalMicroelectronic Engineering
Volume53
Issue number1
DOIs
StatePublished - Jun 2000
Event25th International Conference on Micro- and Nano-Engineering - Rome, Italy
Duration: Sep 21 1999Sep 23 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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