Marks for SCALPEL tool optics optimization

  • R. C. Farrow
  • , G. M. Gallatin
  • , W. K. Waskiewicz
  • , J. A. Liddle
  • , I. Kizilyalli
  • , A. Kornblit
  • , C. Biddick
  • , M. Blakey
  • , F. Klemens
  • , J. Felker
  • , J. Kraus
  • , M. Mkrtchyan
  • , P. A. Orphanos
  • , N. Layadi
  • , S. Merchant

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.

Original languageEnglish (US)
Pages (from-to)309-312
Number of pages4
JournalMicroelectronic Engineering
Volume53
Issue number1
DOIs
StatePublished - Jun 2000
Externally publishedYes
Event25th International Conference on Micro- and Nano-Engineering - Rome, Italy
Duration: Sep 21 1999Sep 23 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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