Abstract
A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as an aerial image monitor. The root-mean-square deviation of the recorded backscattered electron signal from an ideal triangle waveform was used as a measure of the image fidelity, scale and orientation. The resolution of the technique is limited only by signal-to-noise and the fidelity of the marks. Experiments were performed using 2 μm period grating marks that were fabricated in a SiO2/WSi2 structure using SCALPEL lithography and plasma processing. The projector lenses and magnification/rotation coils were optimized. For these experiments the measured resolutions for determining focus (δf), magnification (δM), and rotation (δθ) of a 250 μm X 250 μm field were δf approx. ±1 μm, δM approx. ±15 ppm and δθ approx. ±0.1 mrad. A straightforward path to improving these results is described.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 309-312 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 53 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jun 2000 |
| Externally published | Yes |
| Event | 25th International Conference on Micro- and Nano-Engineering - Rome, Italy Duration: Sep 21 1999 → Sep 23 1999 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering