@inproceedings{a33bca50b0c843edbd9279b91ed1ec56,
title = "Materials characterization using THz ellipsometry",
abstract = "We employ spectroscopic ellipsometry in the terahertz (0.2 to 1.5 THz) and the mid-infrared (9 to 50 THz) spectral range for the non-contact, non-destructive optical determination of the free-charge-carrier properties of low-doped Silicon bulk and thin film structures. We find that carrier concentrations as low as 1015 cm-3 in thin films can be unambiguously determined. We envision ellipsometry in the THz spectral range for future non-contact, non-destructive monitoring and control applications.",
author = "T. Hofmann and Herzinger, \{C. M.\} and Woollam, \{J. A.\} and M. Schubert",
year = "2009",
doi = "10.1557/proc-1163-k08-04",
language = "English (US)",
isbn = "9781615677801",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "19--24",
booktitle = "Materials Research for Terahertz Technology Development",
address = "United States",
note = "2009 MRS Spring Meeting ; Conference date: 14-04-2009 Through 17-04-2009",
}