Skip to main navigation
Skip to search
Skip to main content
New Jersey Institute of Technology Home
Help & FAQ
Home
Profiles
Research units
Facilities
Federal Grants
Research output
Press/Media
Search by expertise, name or affiliation
Measurements of electron channeling pattern linewidths in silicon
R. C. Farrow, D. C. Joy
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Measurements of electron channeling pattern linewidths in silicon'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Electron Channeling Pattern
100%
Intensity Pattern
16%
High-order
16%
Quantitative Measurement
16%
Incident Beam
16%
Beam Divergence
16%
Gating Logic
16%
High Order Reflections
16%
Line Mode
16%
Pattern Contrast
16%
Boxcar
16%
Two-beam Theory
16%
Reciprocal Lattice Vectors
16%
Crystalline Perfection
16%
Very High-order
16%
Engineering
Channelling
100%
Quantitative Measurement
16%
Incident Beam
16%
Integrating Circuits
16%
Scan Signal
16%
Reciprocal Lattice
16%
Lattice Vector
16%
Beam Divergence
16%
Physics
Linewidth
100%
Scanning Electron Microscopy
50%