Mechanical characterization of multilayer thin film stacks containing porous silica using nanoindentation and the finite element method

Ke Li, Subrahmanya Mudhivarthi, Sunil Saigal, Ashok Kumar

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Novel metal/dielectric material combinations are becoming increasingly important for reducing the resistance-capacitance (RC) interconnection delay within integrated circuits (ICs) as the device dimensions shrink to the sub-micron scale. Copper (Cu) is the material of choice for metal interconnects and SiO2 (with a dielectric constant k = ∼3.9) has been used as an interlevel dielectric material in the industry. To meet the demands of the international road map for semiconductors, materials with a significantly lower dielectric constant are needed. In this study, the effects of porosity and layer thicknesses on the mechanical properties of a multilayer thin film (Cu, Ta and SiO2)-substrate (Si) system are examined using nanoindentation and finite element (FE) simulations. A micromechanics model is first developed to predict the stress-strain relation of the porous silica based on the homogenization method for composite materials. An FE model is then generated and validated to perform a parametric study on nanoindentation of the Cu/Ta/SiO2/Si system aiming to predict the mechanical properties of the multilayer film stack.

Original languageEnglish (US)
Article numberO2.3
Pages (from-to)43-48
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume875
DOIs
StatePublished - 2005
Externally publishedYes
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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