Keyphrases
Finite Element Method
100%
Porous Silica
100%
Mechanical Characterization
100%
Multilayer Thin Films
100%
Nanoindentation
100%
Thin Film Stacks
100%
Mechanical Properties
66%
Dielectric Materials
66%
Silica
66%
Cu-Ta
66%
Finite Element Model
33%
Finite Element Simulation
33%
Material Combination
33%
Integrated Circuits
33%
Homogenization Method
33%
Layer Thickness
33%
Semiconductor Materials
33%
Silica-based
33%
Submicron Scale
33%
Metal-dielectric
33%
Composite Materials
33%
Low Dielectric Constant
33%
Dielectric Constant
33%
Porosity Effect
33%
Stress-strain Relationship
33%
Micromechanical Modeling
33%
Device Dimensions
33%
Multilayer Film
33%
Interlevel Dielectrics
33%
Cu-SiO2
33%
SiO2 Substrate
33%
Film Stacking
33%
Capacitance Model
33%
Metal Interconnect
33%
Novel Metals
33%
Interconnect Delay
33%
Cu Substrate
33%
Material Science
Finite Element Method
100%
Thin Films
100%
Silicon Dioxide
100%
Mechanical Testing
100%
Nanoindentation
100%
Dielectric Material
66%
Permittivity
66%
Capacitance
33%
Electronic Circuit
33%
Finite Element Modeling
33%
Composite Material
33%
Semiconductor Material
33%
Homogenization
33%
Stress-Strain Relations
33%
Micromechanics
33%
Multilayer Film
33%
Engineering
Finite Element Method
100%
Thin Films
100%
Dielectrics
100%
Si System
50%
Finite Element Simulation
25%
Interconnects
25%
Material Combination
25%
Integrated Circuit
25%
Layer Thickness
25%
Semiconductor Material
25%
Finite Element Modeling
25%
Composite Material
25%
Stress-Strain Relations
25%
Parametric Study
25%
Copper (Cu)
25%
Micromechanics Model
25%
Effect of Porosity
25%
Multilayer Film
25%