Mechanical characterization of multilayer thin film stacks containing porous silica using nanoindentation and the finite element method

Keyphrases

• Finite Element Method 100%
• Porous Silica 100%
• Mechanical Characterization 100%
• Multilayer Thin Films 100%
• Nanoindentation 100%
• Thin Film Stacks 100%
• Mechanical Properties 66%
• Dielectric Materials 66%
• Silica 66%
• Cu-Ta 66%
• Finite Element Model 33%
• Finite Element Simulation 33%
• Material Combination 33%
• Integrated Circuits 33%
• Homogenization Method 33%
• Layer Thickness 33%
• Semiconductor Materials 33%
• Silica-based 33%
• Submicron Scale 33%
• Metal-dielectric 33%
• Composite Materials 33%
• Low Dielectric Constant 33%
• Dielectric Constant 33%
• Porosity Effect 33%
• Stress-strain Relationship 33%
• Micromechanical Modeling 33%
• Device Dimensions 33%
• Multilayer Film 33%
• Interlevel Dielectrics 33%
• Cu-SiO2 33%
• SiO2 Substrate 33%
• Film Stacking 33%
• Capacitance Model 33%
• Metal Interconnect 33%
• Novel Metals 33%
• Interconnect Delay 33%
• Cu Substrate 33%

Material Science

• Finite Element Method 100%
• Thin Films 100%
• Silicon Dioxide 100%
• Mechanical Testing 100%
• Nanoindentation 100%
• Dielectric Material 66%
• Permittivity 66%
• Capacitance 33%
• Electronic Circuit 33%
• Finite Element Modeling 33%
• Composite Material 33%
• Semiconductor Material 33%
• Homogenization 33%
• Stress-Strain Relations 33%
• Micromechanics 33%
• Multilayer Film 33%

Engineering

• Finite Element Method 100%
• Thin Films 100%
• Dielectrics 100%
• Si System 50%
• Finite Element Simulation 25%
• Interconnects 25%
• Material Combination 25%
• Integrated Circuit 25%
• Layer Thickness 25%
• Semiconductor Material 25%
• Finite Element Modeling 25%
• Composite Material 25%
• Stress-Strain Relations 25%
• Parametric Study 25%
• Copper (Cu) 25%
• Micromechanics Model 25%
• Effect of Porosity 25%
• Multilayer Film 25%