Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory

Y. H. Shih; J. Y. Wu; B. Rajendran; M. H. Lee; R. Cheek; M. Lamorey; M. Breitwisch; Y. Zhu; E. K. Lai; C. F. Chen; E. Stinzianni; A. Schrott; E. Joseph; R. Dasaka; S. Raoux; H. L. Lung; C. Lam

doi:10.1109/IEDM.2008.4796653

Mechanisms of retention loss in Ge₂Sb₂Te ₅-based phase-change memory

Y. H. Shih, J. Y. Wu, B. Rajendran, M. H. Lee, R. Cheek, M. Lamorey, M. Breitwisch, Y. Zhu, E. K. Lai, C. F. Chen, E. Stinzianni, A. Schrott, E. Joseph, R. Dasaka, S. Raoux, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Scopus citations

Abstract

Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous crystallization. In this paper, the change in the threshold voltage (V_T) of memory cells in the RESET state before and after heating is used as a probe into the nature of the retention loss mechanisms. Two mechanisms for the retention loss behavior are identified, responsible for the main distribution and the tail distribution, respectively. Experimental results suggest that (i) an optimized RESET operation produces a fully amorphized Ge₂Sb₂Te ₅ (aGST) active region, with no crystalline domains inside, (ii) cells in the tail distribution fail to retain their RESET state due to spontaneous generation of crystallization nuclei and grain growth, and (iii) cells in the main distribution fail due to grain growth from the amorphous/crystalline GST boundary, instead of nucleation within the active region.

Original language	English (US)
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796653
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: Dec 15 2008 → Dec 17 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	12/15/08 → 12/17/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2008.4796653

Cite this

Shih, Y. H., Wu, J. Y., Rajendran, B., Lee, M. H., Cheek, R., Lamorey, M., Breitwisch, M., Zhu, Y., Lai, E. K., Chen, C. F., Stinzianni, E., Schrott, A., Joseph, E., Dasaka, R., Raoux, S., Lung, H. L., & Lam, C. (2008). Mechanisms of retention loss in Ge₂Sb₂Te ₅-based phase-change memory. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796653 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796653

@inproceedings{65eb992c546644bc8562fbfb79d35d28,

title = "Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory",

abstract = "Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous crystallization. In this paper, the change in the threshold voltage (VT) of memory cells in the RESET state before and after heating is used as a probe into the nature of the retention loss mechanisms. Two mechanisms for the retention loss behavior are identified, responsible for the main distribution and the tail distribution, respectively. Experimental results suggest that (i) an optimized RESET operation produces a fully amorphized Ge2Sb2Te 5 (aGST) active region, with no crystalline domains inside, (ii) cells in the tail distribution fail to retain their RESET state due to spontaneous generation of crystallization nuclei and grain growth, and (iii) cells in the main distribution fail due to grain growth from the amorphous/crystalline GST boundary, instead of nucleation within the active region.",

author = "Shih, {Y. H.} and Wu, {J. Y.} and B. Rajendran and Lee, {M. H.} and R. Cheek and M. Lamorey and M. Breitwisch and Y. Zhu and Lai, {E. K.} and Chen, {C. F.} and E. Stinzianni and A. Schrott and E. Joseph and R. Dasaka and S. Raoux and Lung, {H. L.} and C. Lam",

year = "2008",

doi = "10.1109/IEDM.2008.4796653",

language = "English (US)",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Shih, YH, Wu, JY, Rajendran, B, Lee, MH, Cheek, R, Lamorey, M, Breitwisch, M, Zhu, Y, Lai, EK, Chen, CF, Stinzianni, E, Schrott, A, Joseph, E, Dasaka, R, Raoux, S, Lung, HL & Lam, C 2008, Mechanisms of retention loss in Ge₂Sb₂Te ₅-based phase-change memory. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796653, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 12/15/08. https://doi.org/10.1109/IEDM.2008.4796653

TY - GEN

T1 - Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory

AU - Shih, Y. H.

AU - Wu, J. Y.

AU - Rajendran, B.

AU - Lee, M. H.

AU - Cheek, R.

AU - Lamorey, M.

AU - Breitwisch, M.

AU - Zhu, Y.

AU - Lai, E. K.

AU - Chen, C. F.

AU - Stinzianni, E.

AU - Schrott, A.

AU - Joseph, E.

AU - Dasaka, R.

AU - Raoux, S.

AU - Lung, H. L.

AU - Lam, C.

PY - 2008

Y1 - 2008

N2 - Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous crystallization. In this paper, the change in the threshold voltage (VT) of memory cells in the RESET state before and after heating is used as a probe into the nature of the retention loss mechanisms. Two mechanisms for the retention loss behavior are identified, responsible for the main distribution and the tail distribution, respectively. Experimental results suggest that (i) an optimized RESET operation produces a fully amorphized Ge2Sb2Te 5 (aGST) active region, with no crystalline domains inside, (ii) cells in the tail distribution fail to retain their RESET state due to spontaneous generation of crystallization nuclei and grain growth, and (iii) cells in the main distribution fail due to grain growth from the amorphous/crystalline GST boundary, instead of nucleation within the active region.

AB - Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous crystallization. In this paper, the change in the threshold voltage (VT) of memory cells in the RESET state before and after heating is used as a probe into the nature of the retention loss mechanisms. Two mechanisms for the retention loss behavior are identified, responsible for the main distribution and the tail distribution, respectively. Experimental results suggest that (i) an optimized RESET operation produces a fully amorphized Ge2Sb2Te 5 (aGST) active region, with no crystalline domains inside, (ii) cells in the tail distribution fail to retain their RESET state due to spontaneous generation of crystallization nuclei and grain growth, and (iii) cells in the main distribution fail due to grain growth from the amorphous/crystalline GST boundary, instead of nucleation within the active region.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

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