Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

L. Tsybeskov; L. Montes; G. F. Grom; R. Krishnan; P. M. Fauchet; B. White

doi:10.1109/drc.2000.877085

Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

L. Tsybeskov, L. Montes, G. F. Grom, R. Krishnan, P. M. Fauchet, B. White

Research output: Contribution to conference › Paper › peer-review

Abstract

A definitive experimental observation of resonant carrier tunneling in nanocrystalline Si/SiO₂ superlattices is presented. Device properties including voltage operation, endurance, retention time and leakage dynamics are discussed.

Original language	English (US)
Pages	53-54
Number of pages	2
DOIs	https://doi.org/10.1109/drc.2000.877085
State	Published - 2000
Externally published	Yes
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000

Conference

Conference	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	6/19/00 → 6/21/00

All Science Journal Classification (ASJC) codes

General Engineering

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10.1109/drc.2000.877085

Cite this

@conference{2637650f0bd64a18b93b74b1242728a9,

title = "Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices",

abstract = "A definitive experimental observation of resonant carrier tunneling in nanocrystalline Si/SiO2 superlattices is presented. Device properties including voltage operation, endurance, retention time and leakage dynamics are discussed.",

author = "L. Tsybeskov and L. Montes and Grom, {G. F.} and R. Krishnan and Fauchet, {P. M.} and B. White",

year = "2000",

doi = "10.1109/drc.2000.877085",

language = "English (US)",

pages = "53--54",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

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TY - CONF

T1 - Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

AU - Tsybeskov, L.

AU - Montes, L.

AU - Grom, G. F.

AU - Krishnan, R.

AU - Fauchet, P. M.

AU - White, B.

PY - 2000

Y1 - 2000

N2 - A definitive experimental observation of resonant carrier tunneling in nanocrystalline Si/SiO2 superlattices is presented. Device properties including voltage operation, endurance, retention time and leakage dynamics are discussed.

AB - A definitive experimental observation of resonant carrier tunneling in nanocrystalline Si/SiO2 superlattices is presented. Device properties including voltage operation, endurance, retention time and leakage dynamics are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033650373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033650373&partnerID=8YFLogxK

U2 - 10.1109/drc.2000.877085

DO - 10.1109/drc.2000.877085

M3 - Paper

AN - SCOPUS:0033650373

SP - 53

EP - 54

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -

Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

Abstract

Conference

All Science Journal Classification (ASJC) codes

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