Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

L. Tsybeskov, L. Montes, G. F. Grom, R. Krishnan, P. M. Fauchet, B. White

Research output: Contribution to conferencePaperpeer-review

Abstract

A definitive experimental observation of resonant carrier tunneling in nanocrystalline Si/SiO2 superlattices is presented. Device properties including voltage operation, endurance, retention time and leakage dynamics are discussed.

Original languageEnglish (US)
Pages53-54
Number of pages2
DOIs
StatePublished - Jan 1 2000
Externally publishedYes
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000

Conference

Conference58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period6/19/006/21/00

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices'. Together they form a unique fingerprint.

Cite this