Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

S. Gautier; G. Orsal; T. Moudakir; N. Maloufi; F. Jomard; M. Alnot; Z. Djebbour; A. A. Sirenko; M. Abid; K. Pantzas; I. T. Ferguson; P. L. Voss; A. Ougazzaden

doi:10.1016/j.jcrysgro.2009.11.040

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

S. Gautier, G. Orsal, T. Moudakir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. A. Sirenko, M. Abid, K. Pantzas, I. T. Ferguson, P. L. Voss, A. Ougazzaden

Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.

Original language	English (US)
Pages (from-to)	641-644
Number of pages	4
Journal	Journal of Crystal Growth
Volume	312
Issue number	5
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.11.040
State	Published - Feb 15 2010

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Metal-organic vapour phase epitaxy
B1. BInGaN
B1. Boron
B1. InGaN

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10.1016/j.jcrysgro.2009.11.040

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Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A. A., Abid, M., Pantzas, K., Ferguson, I. T., Voss, P. L., & Ougazzaden, A. (2010). Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content. Journal of Crystal Growth, 312(5), 641-644. https://doi.org/10.1016/j.jcrysgro.2009.11.040

@article{001b18fcc4c7431aa8145f737ce1d329,

title = "Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content",

abstract = "BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.",

keywords = "A3. Metal-organic vapour phase epitaxy, B1. BInGaN, B1. Boron, B1. InGaN",

author = "S. Gautier and G. Orsal and T. Moudakir and N. Maloufi and F. Jomard and M. Alnot and Z. Djebbour and Sirenko, {A. A.} and M. Abid and K. Pantzas and Ferguson, {I. T.} and Voss, {P. L.} and A. Ougazzaden",

year = "2010",

month = feb,

day = "15",

doi = "10.1016/j.jcrysgro.2009.11.040",

language = "English (US)",

volume = "312",

pages = "641--644",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

AU - Gautier, S.

AU - Orsal, G.

AU - Moudakir, T.

AU - Maloufi, N.

AU - Jomard, F.

AU - Alnot, M.

AU - Djebbour, Z.

AU - Sirenko, A. A.

AU - Abid, M.

AU - Pantzas, K.

AU - Ferguson, I. T.

AU - Voss, P. L.

AU - Ougazzaden, A.

PY - 2010/2/15

Y1 - 2010/2/15

N2 - BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.

AB - BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.

KW - A3. Metal-organic vapour phase epitaxy

KW - B1. BInGaN

KW - B1. Boron

KW - B1. InGaN

UR - http://www.scopus.com/inward/record.url?scp=74949118049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74949118049&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.11.040

DO - 10.1016/j.jcrysgro.2009.11.040

M3 - Article

AN - SCOPUS:74949118049

SN - 0022-0248

VL - 312

SP - 641

EP - 644

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 5

ER -

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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